YTL TPDMN26D0UFB4

YTL · FETs & Power MOSFETs · MPN TPDMN26D0UFB4

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Specifications

Output Capacitance(Coss)-
Pd - Power Dissipation250mW
Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)750pC
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)120mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

250mW 20V 1V 120mΩ@4.5V 1 N-channel N-Channel SOD-883 Single FETs, MOSFETs RoHS

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