GOODWORK IRF640

GOODWORK · FETs & Power MOSFETs · MPN IRF640

4.5/5 from 19 engineer reviews.

Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage200V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)18A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.3nF

Technical details

N-Channel 200V 18A 2W Through Hole TO-220-3L

Reviews

Related FETs & Power MOSFETs