GOODWORK IRF640
GOODWORK · FETs & Power MOSFETs · MPN IRF640
4.5/5
from 19 engineer reviews.
Specifications
| Configuration | - |
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
Technical details
N-Channel 200V 18A 2W Through Hole TO-220-3L
Reviews
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HexDump99 — 4/5 · 2026-05-26
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laura22 — 4/5 · 2026-05-24
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gearhead_x — 4/5 · 2026-05-22
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SilentStorm — 5/5 · 2026-05-17
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NightCrawler47 — 5/5 · 2026-05-11
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JoltFactor — 4/5 · 2026-05-11
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CriticalHit77 — 4/5 · 2026-05-10
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motor_mark — 5/5 · 2026-05-08
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PhantomCore — 5/5 · 2026-04-29
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jtag_jake — 4/5 · 2026-04-23
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gate_keeper — 5/5 · 2026-04-22
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ground_plane — 4/5 · 2026-04-17
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adam — 4/5 · 2026-04-16
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hacker_h — 5/5 · 2026-04-16
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diy_dave — 4/5 · 2026-04-13
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AceHigh_77 — 5/5 · 2026-04-09
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power_rail — 5/5 · 2026-04-05
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ZeroLatency — 5/5 · 2026-04-04
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david84 — 4/5 · 2026-04-01
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