YONGYUTAI WNM6002

YONGYUTAI · FETs & Power MOSFETs · MPN WNM6002

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)-
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)340mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200mW
RDS(on)5.3Ω@4.5V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-channel
Input Capacitance(Ciss)40pF
TypeN-Channel

Technical details

N-Channel 60V 340mA 0.2W Surface Mount SOT-323

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