YONGYUTAI SI2310

YONGYUTAI · FETs & Power MOSFETs · MPN SI2310

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)38mΩ@1.8V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

N-Channel 20V 5A 1250mW Surface Mount SOT-23

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