YONGYUTAI · FETs & Power MOSFETs · MPN SI2306
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6.6nC@10V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 60mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 275pF |
| Type | N-Channel |
N-Channel 30V 4A 1W Surface Mount SOT-23