YONGYUTAI SI2305 2305

YONGYUTAI · FETs & Power MOSFETs · MPN SI2305 2305

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Specifications

Drain to Source Voltage12V
Gate Charge(Qg)12.3nC
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))900mV
Pd - Power Dissipation350mW
RDS(on)53mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)105pF
Number1 P-Channel
Input Capacitance(Ciss)1.66nF
Vgs±8V
TypeP-Channel

Technical details

P-Channel 12V 3.4A 0.35W Surface Mount SOT-23

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