YONGYUTAI · FETs & Power MOSFETs · MPN SI2302T
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 736.6pC@4.5V |
| Output Capacitance(Coss) | 9.68pF |
| Current - Continuous Drain(Id) | 630mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 280mW |
| Reverse Transfer Capacitance (Crss@Vds) | 5.37pF |
| RDS(on) | 300mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 60.67pF |
| Type | N-Channel |
20V 630mA 1V 280mW 300mΩ@4.5V 1 N-channel N-Channel SOT-523 Single FETs, MOSFETs RoHS