YONGYUTAI · FETs & Power MOSFETs · MPN SI2301W
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 10nC@4.5V;6nC@2.5V |
| Output Capacitance(Coss) | 75pF |
| Current - Continuous Drain(Id) | 2.8A |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 55pF |
| RDS(on) | 120mΩ@4.5V;170mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 405pF |
| Type | P-Channel |
20V 2.8A 1V 350mW 1 P-Channel P-Channel SOT-323 Single FETs, MOSFETs RoHS