YONGYUTAI SI2301B

YONGYUTAI · FETs & Power MOSFETs · MPN SI2301B

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)2.9nC@4.5V
Current - Continuous Drain(Id)2.5A
Output Capacitance(Coss)42pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)80mΩ@4.5V;110mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)248pF
TypeP-Channel

Technical details

P-Channel 20V 2.5A 1W Surface Mount SOT-23

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