YONGYUTAI SI2301

YONGYUTAI · FETs & Power MOSFETs · MPN SI2301

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)2.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation700mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)120mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)200pF
TypeP-Channel

Technical details

P-Channel 20V 2.2A 700mW Surface Mount SOT-23

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