YONGYUTAI MJD122

YONGYUTAI · Transistors (BJTs) · MPN MJD122

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Specifications

Current - Collector Cutoff200uA
Vbe On(VBE(on))2.5V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO5V
DC Current Gain1000
Pd - Power Dissipation1.75W
type-
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))2V@3A,12mA

Technical details

100V 1000 3A TO-252 Single Bipolar Transistors RoHS

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