YONGYUTAI · Transistors (BJTs) · MPN MJD122
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| Current - Collector Cutoff | 200uA |
|---|---|
| Vbe On(VBE(on)) | 2.5V |
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 1000 |
| Pd - Power Dissipation | 1.75W |
| type | - |
| Current - Collector(Ic) | 3A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 2V@3A,12mA |
100V 1000 3A TO-252 Single Bipolar Transistors RoHS