HGSEMI ULN2003AN

HGSEMI · Transistors (BJTs) · MPN ULN2003AN

4.5/5 from 19 engineer reviews.

Specifications

Output Leakage Current(Icex)20uA
Collector - Emitter Voltage VCEO50V
number of channelsSeven channels
Input Current(on)0.93mA
Voltage - Input(Max)30V
Input Current(off)100uA
Current - Collector(Ic)500mA
Operating Temperature-40℃~+85℃

Technical details

50V Seven channels 500mA DIP-16 Bipolar Transistor Arrays RoHS

Reviews

Related Transistors (BJTs)