YONGYUTAI AO3407B

YONGYUTAI · FETs & Power MOSFETs · MPN AO3407B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)11.5nC@10V
Current - Continuous Drain(Id)4.1A
Output Capacitance(Coss)80pF
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.5W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)40mΩ@10V;55mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)570pF
TypeP-Channel

Technical details

30V 4.1A 1.5V 1.5W 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS

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