YFW YFWG50N10AD

YFW · FETs & Power MOSFETs · MPN YFWG50N10AD

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Specifications

Gate Charge(Qg)19nC
Drain to Source Voltage100V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation82W
Reverse Transfer Capacitance (Crss@Vds)19.2pF
RDS(on)14mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)992pF
TypeN-Channel

Technical details

100V 50A 2.2V 82W 14mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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