YFW · FETs & Power MOSFETs · MPN YFW8N65AF
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 2.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 51W |
| RDS(on) | 2.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 981pF |
N-Channel 650V 2.6A 51W Through Hole TO-220F