YFW · FETs & Power MOSFETs · MPN YFW65R190AP
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| Drain to Source Voltage | 650V |
|---|---|
| Output Capacitance(Coss) | 150pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 5.2pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.96nF |
| Type | N-Channel |
650V 20A 4V 200W 150mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS