YFW YFW4N65AMJ

YFW · FETs & Power MOSFETs · MPN YFW4N65AMJ

No reviews yet — be the first to review YFW YFW4N65AMJ.

Specifications

Configuration-
Gate Charge(Qg)15nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)69.5pF
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation36W
RDS(on)2Ω@10V
Reverse Transfer Capacitance (Crss@Vds)10.9pF
Number1 N-channel
Input Capacitance(Ciss)580pF

Technical details

650V 4A 36W Through Hole TO-251

Related FETs & Power MOSFETs