YFW YFW2N65AF

YFW · FETs & Power MOSFETs · MPN YFW2N65AF

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Specifications

Configuration-
Gate Charge(Qg)10.8nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)32pF
Current - Continuous Drain(Id)2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
RDS(on)4Ω@10V
Reverse Transfer Capacitance (Crss@Vds)6pF
Number1 N-channel
Input Capacitance(Ciss)415pF

Technical details

650V 2A 4V 25W 4Ω@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

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