YFW YFW1N60MSI

YFW · FETs & Power MOSFETs · MPN YFW1N60MSI

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)4.8nC@10V
Output Capacitance(Coss)25pF
Current - Continuous Drain(Id)1A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)5.4pF
Number1 N-channel
Input Capacitance(Ciss)150pF

Technical details

600V 1A 4V 20W 1 N-channel SOT-223 Single FETs, MOSFETs RoHS

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