YFW · FETs & Power MOSFETs · MPN 1N65
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 5nC@10V |
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 20pF |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 12.5Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 120pF |
N-Channel 650V 1.2A 1W Through Hole TO-92