YANGJIE · FETs & Power MOSFETs · MPN YJSD03GP10A
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 2A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 500mW |
| RDS(on) | 110mΩ@10V |
| Type | P-Channel |
100V 2A 2.5V 500mW 110mΩ@10V P-Channel SOP-8-Dual Single FETs, MOSFETs RoHS