YANGJIE YJS4953B

YANGJIE · FETs & Power MOSFETs · MPN YJS4953B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)6nC@10V
Current - Continuous Drain(Id)5.1A
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation2W
RDS(on)43mΩ@10V
Number2 P-Channel
Input Capacitance(Ciss)490pF
TypeP-Channel

Technical details

30V 5.1A 2.4V 2W 43mΩ@10V 2 P-Channel P-Channel SOP-8-Dual Single FETs, MOSFETs RoHS

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