YANGJIE · FETs & Power MOSFETs · MPN YJS4447B
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| Gate Charge(Qg) | 111.7nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 477pF |
| RDS(on) | 5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 6.464nF |
| Type | P-Channel |
P-Channel 30V 18A 3.4W Surface Mount SOP-8