YANGJIE YJS4435B

YANGJIE · FETs & Power MOSFETs · MPN YJS4435B

No reviews yet — be the first to review YANGJIE YJS4435B.

Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)19mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.22nF
TypeP-Channel

Technical details

P-Channel 30V 10A 2.5W Surface Mount SOP-8

Related FETs & Power MOSFETs