YANGJIE YJS18N03A

YANGJIE · FETs & Power MOSFETs · MPN YJS18N03A

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Specifications

Gate Charge(Qg)46.3nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)247pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.191nF

Technical details

N-Channel 30V 18A 3W Surface Mount SOP-8

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