YANGJIE · FETs & Power MOSFETs · MPN YJQD30P02A
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| Gate Charge(Qg) | 72.8nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 12.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 272pF |
| RDS(on) | 11mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 2.992nF |
20V 30A 12.8W 11mΩ@4.5V 2 P-Channel DFN3333-8L-Dual Single FETs, MOSFETs RoHS