YANGJIE YJQ55P02A

YANGJIE · FETs & Power MOSFETs · MPN YJQ55P02A

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Specifications

Gate Charge(Qg)12.7nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)690pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))400mV
Pd - Power Dissipation3.2W
Reverse Transfer Capacitance (Crss@Vds)477pF
RDS(on)6.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.358nF
TypeP-Channel

Technical details

P-Channel 20V 55A 3.2W Surface Mount DFN3333-8L

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