YANGJIE YJQ50P03A

YANGJIE · FETs & Power MOSFETs · MPN YJQ50P03A

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Specifications

Gate Charge(Qg)111.7nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)477pF
RDS(on)11mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)6.464nF

Technical details

P-Channel 30V 50A 83W Surface Mount PDFN-8(3.3x3.3)

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