YANGJIE YJQ50N03B

YANGJIE · FETs & Power MOSFETs · MPN YJQ50N03B

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Specifications

Gate Charge(Qg)46.3nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)247pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.191nF
TypeN-Channel

Technical details

N-Channel 30V 50A 30W Surface Mount DFN3333-8L

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