YANGJIE · FETs & Power MOSFETs · MPN YJQ4666B
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| Gate Charge(Qg) | 40.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 620mV |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 109pF |
| RDS(on) | 60.5mΩ@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 852pF |
| Type | P-Channel |
P-Channel 20V 7A 2.2W Surface Mount DFN2020-6L