YANGJIE YJQ35N04A

YANGJIE · FETs & Power MOSFETs · MPN YJQ35N04A

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Specifications

Gate Charge(Qg)46.7nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.86nF
TypeN-Channel

Technical details

N-Channel 40V 35A 40W Surface Mount DFN3333-8L

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