YANGJIE YJQ30N03A

YANGJIE · FETs & Power MOSFETs · MPN YJQ30N03A

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Specifications

Gate Charge(Qg)23.6nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation10.5W
Reverse Transfer Capacitance (Crss@Vds)164pF
RDS(on)5.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.015nF
TypeN-Channel

Technical details

N-Channel 30V 30A 10.5W Surface Mount DFN3333-8L

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