YANGJIE · FETs & Power MOSFETs · MPN YJQ10N02A
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| Gate Charge(Qg) | 11.05nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 133pF |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 117pF |
| RDS(on) | 18.5mΩ@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 888pF |
| Type | N-Channel |
N-Channel 20V 13A 2.2W Surface Mount DFN2020-6L