YANGJIE YJP70G10A

YANGJIE · FETs & Power MOSFETs · MPN YJP70G10A

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)797pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)36pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.27nF
TypeN-Channel

Technical details

N-Channel 100V 70A 125W Through Hole TO-220

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