YANGJIE · FETs & Power MOSFETs · MPN YJP200G06A
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| Gate Charge(Qg) | 86nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.25nF |
| Current - Continuous Drain(Id) | 200A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 260W |
| RDS(on) | 3.6mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.95nF |
| Type | N-Channel |
N-Channel 60V 200A 260W Through Hole TO-220