YANGJIE · FETs & Power MOSFETs · MPN YJM04N10A
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 33pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 110mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.07nF |
| Type | N-Channel |
N-Channel 100V 4A 2.5W Surface Mount SOT-223