YANGJIE YJL3139KDW

YANGJIE · FETs & Power MOSFETs · MPN YJL3139KDW

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Specifications

Gate Charge(Qg)1.24nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)20pF
Current - Continuous Drain(Id)650mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))350mV
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)360mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)71pF
TypeP-Channel

Technical details

P-Channel 20V 0.65A 0.2W Surface Mount SOT-363

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