YANGJIE YJL3139KAT

YANGJIE · FETs & Power MOSFETs · MPN YJL3139KAT

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)1.24nC@4.5V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)500mA
Gate Threshold Voltage (Vgs(th))1.1V
Pd - Power Dissipation100mW
RDS(on)2Ω@1.8V
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 P-Channel
Input Capacitance(Ciss)40pF
TypeP-Channel

Technical details

20V 500mA 1.1V 100mW 2Ω@1.8V 1 P-Channel P-Channel SOT-723 Single FETs, MOSFETs RoHS

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