YANGJIE YJL3139KAE

YANGJIE · FETs & Power MOSFETs · MPN YJL3139KAE

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Specifications

Gate Charge(Qg)1.24nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)500mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation180mW
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)850mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)71pF
TypeP-Channel

Technical details

20V 500mA 1.2V 180mW 850mΩ@4.5V 1 P-Channel P-Channel SOT-523(SC-75) Single FETs, MOSFETs RoHS

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