YANGJIE · FETs & Power MOSFETs · MPN YJL03N03B
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6nC@10V |
| Current - Continuous Drain(Id) | 3A |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 700mW |
| RDS(on) | 55mΩ@10V |
| Type | N-Channel |
30V 3A 1.5V 700mW 55mΩ@10V N-Channel SOT-23(TO-236) Single FETs, MOSFETs RoHS