YANGJIE · FETs & Power MOSFETs · MPN YJGD50G04HHQ
No reviews yet — be the first to review YANGJIE YJGD50G04HHQ.
| Gate Charge(Qg) | 12.5nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 50A |
| Output Capacitance(Coss) | 283pF |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 8.5mΩ@10V |
| Input Capacitance(Ciss) | 935pF |
| Type | N-Channel |
40V 50A 4V 60W 8.5mΩ@10V N-Channel PDFN5060-8L-Dual Single FETs, MOSFETs RoHS