YANGJIE · FETs & Power MOSFETs · MPN YJGD20G10B
No reviews yet — be the first to review YANGJIE YJGD20G10B.
| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 20A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 69W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 19mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.15nF |
| Type | N-Channel |
N-Channel 100V 20A 69W Surface Mount PDFN5060-8L-Dual