YANGJIE YJGD20G10A

YANGJIE · FETs & Power MOSFETs · MPN YJGD20G10A

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Specifications

Gate Charge(Qg)16nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)399pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)17mΩ@10V;21mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)1.051nF
TypeN-Channel

Technical details

N-Channel Array 100V 20A Surface Mount DFN5060-8L-DUal

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