YANGJIE · FETs & Power MOSFETs · MPN YJGD20G10A
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 399pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 17mΩ@10V;21mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.051nF |
| Type | N-Channel |
N-Channel Array 100V 20A Surface Mount DFN5060-8L-DUal