YANGJIE · FETs & Power MOSFETs · MPN YJG80GP06BQ
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| Gate Charge(Qg) | 80.7nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 1.555nF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| RDS(on) | 8.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.5nF |
P-Channel 60V 80A 120W Surface Mount PDFN5060-8L