YANGJIE · FETs & Power MOSFETs · MPN YJG65G04HHQ
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| Drain to Source Voltage | 40V |
|---|---|
| Current - Continuous Drain(Id) | 65A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| RDS(on) | 9mΩ@10V |
| Type | N-Channel |
40V 65A 4V 100W 9mΩ@10V N-Channel PDFN5060-8L Single FETs, MOSFETs RoHS