YANGJIE · FETs & Power MOSFETs · MPN YJG60G10BQ
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| Gate Charge(Qg) | 36nC@13V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | - |
| RDS(on) | 15mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.5nF |
| Type | N-Channel |
N-Channel 100V 60A Surface Mount PDFN-8L(5.9x5.2)