YANGJIE YJG60G10A

YANGJIE · FETs & Power MOSFETs · MPN YJG60G10A

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Specifications

Gate Charge(Qg)32nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)715pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation28.8W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)8.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.431nF
TypeN-Channel

Technical details

N-Channel 100V 60A 28.8W Surface Mount PDFN5060-8L

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