YANGJIE YJG55P03B

YANGJIE · FETs & Power MOSFETs · MPN YJG55P03B

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)38nC@10V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)55A
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation62W
RDS(on)20mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)280pF
Number1 P-Channel
Input Capacitance(Ciss)1.86nF
TypeP-Channel

Technical details

30V 55A 2.8V 62W 20mΩ@4.5V 1 P-Channel P-Channel PDFN5060-8L Single FETs, MOSFETs RoHS

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