YANGJIE · FETs & Power MOSFETs · MPN YJG40G10B
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| Gate Charge(Qg) | 32nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 40A |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 70W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 25mΩ@6V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
| Type | N-Channel |
100V 40A 4V 70W 25mΩ@6V 1 N-channel N-Channel PDFN5060-8L Single FETs, MOSFETs RoHS