YANGJIE YJG25GP10AQ

YANGJIE · FETs & Power MOSFETs · MPN YJG25GP10AQ

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)220pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)55mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.2nF
TypeP-Channel

Technical details

P-Channel 100V 25A 70W Surface Mount PDFN5060-8L

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